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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium Power Surface Mount Products
MMDF3304
Motorola Preferred Device
TMOS Dual N-Channel Field Effect Transistors
TM
DUAL TMOS POWER MOSFET 7.3 AMPERES 30 VOLTS RDS(on) = 25 mW
WaveFETTM devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. WaveFETTM devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications * Characterized Over a Wide Range of Power Ratings * Logic Level Gate Drive -- Can Be Driven by Logic ICs * Diode Is Characterized for Use In Bridge Circuits * Diode Exhibits High Speed, with Soft Recovery * IDSS Specified at Elevated Temperature * Miniature SO-8 Surface Mount Package -- Saves Board Space
D
CASE 751-06, Style 13 SO-8
SOURCE 1 G GATE 1 SOURCE 2 GATE 2 S
1 2 3 4
8 7 6 5
DRAIN 1 DRAIN 1 DRAIN 2 DRAIN 2
TOP VIEW
DEVICE MARKING
D3304 Device MMDF3304R2
ORDERING INFORMATION
Reel Size 13 Tape Width 12 mm embossed tape Quantity 2500 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value. REV 2
(c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997
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MMDF3304
MAXIMUM RATINGS (TJ = 25C unless otherwise specified)
Characteristics Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage -- Continuous 1 Inch Square @ 10 seconds on FR-4 or G-10 PCB Thermal Resistance -- Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (1) Thermal Resistance -- Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (1) Thermal Resistance -- Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (1) Symbol VDSS VDGR VGS RTHJA PD ID ID IDM RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg Maximum 30 20 20 62.5 2.0 16 7.3 4.9 44 98 1.28 10.2 5.8 3.9 35 166 0.75 6.0 4.5 3.0 27 -55 to 150 Unit V
C/W Watts mW/C A A A C/W Watts mW/C A A A C/W Watts mW/C A A A C
1 Inch Square @ Steady State on FR-4 or G-10 PCB
Minimum Pad @ Steady State on FR-4 or G-10 PCB
Operating and Storage Temperature Range (1) Repetitive rating; pulse width limited by maximum junction temperature.
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Motorola TMOS Power MOSFET Transistor Device Data
MMDF3304
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage(1) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage(1) (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance(1) (VGS = 10 Vdc, ID = 7.3 Adc) (VGS = 4.5 Vdc, ID = 5.8 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 7.3 Adc)(1) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge ( (VDS = 15 Vd , ID = 5 0 Ad , Vdc, 5.0 Adc, VGS = 10 Vdc)(1) Vdc, 1.0 Adc, (VDD = 15 Vd ID = 1 0 Ad VGS = 4.5 Vdc, 4 5 Vdc RG = 6.0 )(1) ) Vdc, 1.0 Adc, (VDS = 15 Vd ID = 1 0 Ad VGS = 10 Vdc Vdc, RG = 6.0 )(1) ) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 1 7 Ad , VGS = 0 Vdc, 1.7 Adc, Vd , ( dIS/dt = 100 A/s)(1) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperatures. (3) Repetitive rating; pulse width limited by max. junction temperature. (IS = 1.7 Adc, VGS = 0 Vdc)(1) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR -- -- -- -- -- -- TBD TBD TBD TBD TBD TBD 1.2 -- -- -- -- -- C Vdc ns -- -- -- -- -- -- -- -- -- -- -- -- TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD -- -- -- nC ns (VDS = 15 Vdc, VGS = 0 V, Vdc V f = 1.0 MHz) Ciss Coss Crss -- -- -- TBD TBD TBD TBD TBD TBD pF VGS(th) 1.0 -- RDS(on) -- -- gFS -- TBD TBD TBD 25 TBD -- Mhos -- TBD -- -- Vdc mV/C m V(BR)DSS 30 -- IDSS -- -- IGSS -- -- -- -- 1.0 10 100 nAdc -- TBD -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
Motorola TMOS Power MOSFET Transistor Device Data
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MMDF3304
PACKAGE DIMENSIONS
A
8
D
5
C
E
1 4
H
0.25
M
B
M
h B C e A
SEATING PLANE
X 45 _
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_
q
L 0.10 A1 B 0.25
M
CB
S
A
S
q
CASE 751-06 ISSUE T
STYLE 13: PIN 1. 2. 3. 4. 5. 6. 7. 8.
N.C. SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MMDF3304/D Motorola TMOS Power MOSFET Transistor Device Data

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